[dmwg] [physics] Seminar {01}

IOP Scientific Activities activity at iop.vast.ac.vn
Tue Nov 12 11:22:16 GMT 2013


VIỆN VẬT LÝ
INSTITUTE OF PHYSICS
---------------------------------------
SEMINAR
VẬT LÝ LÝ THUYẾT và VẬT LÝ TÍNH TOÁNTheoretical and 
Computational Physics SeminarTiêu đề/Title:

Electronic structure and transportproperties in graphene and rotated 
graphene bilayers

Người trình bày/Speaker:
TS.Guy Trambly de Laissardière

( Laboratoire de Physique Théorique et Modélisation
Université de Cergy-Pontoise / CNRS)
Thời gian/Time:
10g00, ThứBa, 19-11-2013 

Địa điểm/Venue:
Phòng họp tầng 1, Viện Vật lý, 10 Đào Tấn, Ba Đình, Hà 
Nội
Tóm tắt/abstractOn
 electronic structure in rotated graphene bilayers, we address the long 
lasting problem of the origin of the Moiré pattern observed on STM 
images (for graphene multi layers and graphite). The general belief is 
that the STM contrast in Moiré patterns is related to the difference in 
the local density of states for different stacking regions. For large 
and intermediated rotation angles, we present analytical and numerical 
studies of the electronic structure which compare well to STM spectra. 
For very small angles, this Moiré pattern ultimately leads to electronic
 confinement in AA regions at some energies close to the Dirac point.


We propose a unified description of transport in 
graphene with adsorbates that fully takes into account localization 
effects and loss of electronic coherence due to inelastic processes. We 
focus in particular on the role of the scattering properties of the 
adsorbates and analyse in detail cases with resonant or non resonant 
scattering. For both models we identify several regimes of conduction 
depending on the value of the Fermi energy. Sufficiently far from the 
Dirac energy and at sufficiently small concentrations the semi-classical
 theory can be a good approximation. Near the Dirac energy we identify 
different quantum regimes, where the conductivity presents universal 
behaviours. Transport in rotated graphene bilayers is also discussed.

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